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data sheet 1 of 12 rev. 05, 2007-05-11 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA241301E ptfa241301f description the PTFA241301E and ptfa241301f are thermally-enhanced 130-watt, internally matched goldmo s ? fets intended for ultra- linear applications. they are characterized for cdma, cdma2000, super3g (3gpp tsg ran), and wimax operation from 2420 to 2480 mhz. full gold metallization ensures excellent device lifetime and reliability. PTFA241301E package h-30260-2 thermally-enhanced high power rf ldmos fets 130 w, 2420 ? 2480 mhz three-carrier cdma2000 performance v dd = 28 v, i dq = 1150 ma, ? = 2450 mhz 5 10 15 20 25 30 35 40 45 36 38 40 42 44 46 48 output power, avg. (dbm) drain efficiency (%) -80 -75 -70 -65 -60 -55 -50 -45 -40 adj. ch. power ratio (dbc) alt up efficiency acp up acp low rf characteristics three-carrier cdma2000 measurements (not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 1150 ma, p out = 25 w average, ? = 2450 mhz characteristic symbol min typ max unit gain g ps ? 14 ? db drain efficiency h d ? 25 ? % adjacent channel power ratio acpr ? ?50 ? dbc ptfa241301f package h-31260-2 features ? thermally-enhanced packaging, pb-free and rohs-compliant ? broadband internal matching ? typical cdma2000 performance at 2450 mhz - average output power = 25 w - linear gain = 14 db - efficiency = 25% ? typical cw performance, 2420 mhz, 28 v - output power at p?1db = 140 w - efficiency = 50% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 130 w (cw) output power *see infineon distributor for future availability.
PTFA241301E ptfa241301f data sheet 2 of 12 rev. 05, 2007-05-11 *see infineon distributor for future availability. rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 1150 ma , p out = 130 w pep, ? = 2420 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 13.0 14 ? db drain efficiency h d 36 38 ? % intermodulation distortion imd ? ?30 ?28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.07 ? w operating gate voltage v ds = 28 v, i dq = 1150 ma v gs 2 2.4 3 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 438 w above 25c derate by 2.5 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 130 w cw) r q jc 0.40 c/w ordering information type package outline package description marking PTFA241301E h-30260-2 thermally-enhanced slotted flange, single-ended PTFA241301E ptfa241301f h-31260-2 thermally-enhanced earless flange, single-ended ptfa241301f
PTFA241301E ptfa241301f data sheet 3 of 12 rev. 05, 2007-05-11 linear broadband performance v dd = 28 v, i dq = 1150 ma, p out , avg. = 45.5 dbm 0 5 10 15 20 2420 2430 2440 2450 2460 2470 2480 frequency (mhz) gain (db) -20 -15 -10 -5 0 return loss (db) gain return loss broadband cw performance (at p?1db) v dd = 28 v, i dq = 1150 ma 12 13 14 15 16 17 18 2420 2430 2440 2450 2460 2470 2480 frequency (mhz) gain (db) 47 48 49 50 51 52 53 efficiency (%), p out (dbm) output power efficiency gain typical performance (data taken in a production test fixture) gain & efficiency vs. output power v dd = 28 v, i dq = 1150 ma, ? = 2450 mhz 10 11 12 13 14 15 16 36 38 40 42 44 46 48 50 52 output power (dbm) gain (db) 0 10 20 30 40 50 60 drain efficiency (%) efficiency gain intermodulation distortion vs. output power (as measured in a broadband circuit) v dd = 28 v, i dq = 1150 ma, ? 1 = 2449 mhz, ? 2 = 2450 mhz -80 -70 -60 -50 -40 -30 -20 -10 0 36 38 40 42 44 46 48 50 52 output power, avg. (dbm) imd (dbc) 3rd order 7th 5th
PTFA241301E ptfa241301f data sheet 4 of 12 rev. 05, 2007-05-11 is-95 cdma performance v dd = 28 v, i dq = 1150 ma, ? = 2450 mhz 0 5 10 15 20 25 30 35 30 32 34 36 38 40 42 44 output power, avg. (dbm) drain efficiency (%) -80 -75 -70 -65 -60 -55 -50 -45 -40 adjacent channel power ratio (dbc) t case = 25c t case = 90c efficiency acp f c ? 0.75 mhz acp f c + 1.98 mhz im3 vs. output power at selected biases v dd = 28 v, ? 1 = 2449, ? 2 = 2450 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 36 38 40 42 44 46 48 50 output power, avg. (dbm) imd (dbc) 860 ma 1430 ma 1150 ma output power (at 1 db compression) vs. supply voltage i dq = 1150 ma, ? = 2450 mhz 49.0 49.5 50.0 50.5 51.0 51.5 52.0 24 26 28 30 32 supply voltage (v) output power (dbm) power sweep v dd = 28 v, ? = 2450 mhz 11 12 13 14 15 37 39 41 43 45 47 49 51 53 output power (dbm) power gain (db) i dq = 1430 ma i dq = 860 ma i dq = 1150 ma typical performance (cont.)
PTFA241301E ptfa241301f data sheet 5 of 12 rev. 05, 2007-05-11 wimax performance v dd = 28 v, i dq = 1.2 a, (modulation = 64 qam2/3, channel bandwidth = 3.5 mhz, sample rate = 4 mhz) 0 5 10 15 20 25 30 15 20 25 30 35 40 45 50 output power (dbm) efficiency (%) -45 -40 -35 -30 -25 -20 -15 evm (dbc) efficiency ? = 2.42 ghz ? = 2.48 ghz ? = 2.45 ghz typical performance (cont.) wimax performance v dd = 28 v, i dq = 1.2 a, ? = 2480 mhz, (modulation = 64 qam2/3, channel bandwidth = 3.5 mhz, sample rate = 4 mhz) -45 -40 -35 -30 -25 -20 -15 15 20 25 30 35 40 45 50 output power (dbm) evm (db) t = +25 c t = +85 c t = ?20 c wimax performance v dd = 28 v, ? = 2480 mhz (modulation = 64 qam2/3, channel bandwidth = 3.5 mhz, sample rate = 4 mhz) -45 -40 -35 -30 -25 -20 -15 15 20 25 30 35 40 45 50 output power (dbm) evm (db) i dq = 0.90 a i dq = 1.2 a i dq = 1.65 a power sweep, under pulsed conditions v dd = 28 v, i dq = 1.15 a, ? = 2420 mhz, pulse period = 800 s, pulse width = 80 s, 1% duty cycle 44 46 48 50 52 54 56 58 60 30 35 40 45 input power (dbm) output power (dbm) ideal actual p?6db = 52.5 dbm p?1db = 51.5 dbm p?3db = 52.1 dbm
PTFA241301E ptfa241301f data sheet 6 of 12 rev. 05, 2007-05-11 broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 2420 13.20 4.69 1.35 4.73 2430 13.30 4.75 1.28 4.80 2450 13.85 4.94 1.14 4.99 2470 14.59 5.00 1.06 5.27 2480 15.01 4.91 1.01 5.43 see next page for circuit information 0 . 1 0 . 3 0 . 2 0 . 1 0 . 2 0 . 1 0 . 0 z load 2420 mhz 2480 mhz 2480 mhz z source 2420 mhz z 0 = 50 w typical performance (cont.) ccdf vs. output power peak-to-average ratio v dd = 28 v, i dq = 1.15 a, ? = 2400 mhz, single-carrier 3gpp wcdma, tm1, 64 dpch, par = 7.5 db 0.001 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 8 9 output power par (db) probability ccdf (%) source 30 dbm 43 dbm 43.5 dbm 44 dbm 46 dbm 48 dbm bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.28 a 0.83 a 1.39 a 2.09 a 4.17 a 6.26 a 8.34 a 10.43 a 12.52 a
PTFA241301E ptfa241301f data sheet 7 of 12 rev. 05, 2007-05-11 a241301e_sch r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 c1 0.001f qq1 q1 r5 5.1k v 4.5pf 10 f 35v 4.5pf 0.1f 0.9pf l 1 l 2 l 3 l 5 l 7 10 v r6 r7 c5 c4 c6 c7 c8 v 5.1k l 8 c9 1.0pf dut 4.5pf 0.6pf 4.5pf 1f 0.1f v dd l 9 l 13 l 14 c10 c11 c12 c13 c19 c18 l1 l2 10f 50v 1f 10f 50v 4.5pf 0.1f c17 c16 c15 c14 rf_out v dd rf_in l 6 l 4 l 10 l 11 l 12 reference circuit reference circuit schematic for ? = 2420 mhz circuit assembly information dut PTFA241301E or ptfa241301f ldmos transistor pcb 0.76 mm [.030?] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 2420 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.112 l , 50.0 w 7.52 x 1.37 0.296 x 0.054 l 2 0.039 l , 34.0 w 2.54 x 2.54 0.100 x 0.100 l 3 0.045 l , 34.0 w 2.92 x 2.54 0.115 x 0.100 l 4 0.044 l , 34.0 w 2.87 x 2.54 0.113 x 0.100 l 5 0.017 l , 34.0 w 1.09 x 2.54 0.043 x 0.100 l 6 0.307 l , 60.0 w 21.01 x 0.97 0.827 x 0.038 l 7 0.019 l , 14.7 w 1.17 x 7.62 0.046 x 0.300 l 8 0.083 l , 8.0 w 5.03 x 15.24 0.198 x 0.600 l 9, l 10 0.237 l , 50.0 w 16.00 x 1.27 0.630 x 0.050 l 11 0.057 l , 4.3 w 3.43 x 29.85 0.135 x 1.175 l 12 (taper) 0.098 l , 4.3 w / 50.0 w 5.99 x 29.85 / 1.37 0.236 x 1.175 / 0.054 l 13 0.034 l , 50.0 w 2.29 x 1.37 0.090 x 0.054 l 14 0.164 l , 50.0 w 11.13 x 1.37 0.438 x 0.054 1 electrical characteristics are rounded.
PTFA241301E ptfa241301f data sheet 8 of 12 rev. 05, 2007-05-11 reference circuit (cont.) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 366-1655-2-nd c5, c12, c16 capacitor, 0.1 f digi-key pcc104bct-nd c6, c7, c10, c14, c18 ceramic capacitor 4.5 pf atc 100b 4r5 c8 ceramic capacitor 0.9 pf atc 100b 0r9 c9 ceramic capacitor 1 pf atc 100b 1r0 c11, c15 ceramic capacitor 1 f digi-key 19528-nd c13, c17 capacitor, 10 f, 50 v garrett electronics tps106k050r0400 c19 ceramic capacitor 0.6 pf atc 100b 0r6 l1, l2 ferrite, 6 mm ferroxcube 53/3/4.6-452 q1 transistor infineon technologies bcp56 qq1 voltage regulator, national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor, 2 k-ohms digi-key p22kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r7 chip resistor, 5.1 k-ohms digi-key p5.1kect-nd r6 chip resistor, 10 ohms digi-key p10ect-nd a241301e_assy-05-09-08 lm c5 c6 r4 q1 qq1 c3 c1 r1 c2 r2 r5 r3 r6 r7 c7 c8 c9 c10 c11 c13 l1 c18 c19 c16 c17 c15 c14 l2 c12 c4 v dd v dd v dd reference circuit assembly diagram* (not to scale) *gerber files for this circuit available on request rf_in rf_out
PTFA241301E ptfa241301f data sheet 9 of 12 rev. 05, 2007-05-11 260-cases_30260 0.0381 [.0015] -a- 22.350.23 [.880.009] (2x 4.830.50 [.190.020]) 2x 12.70 [.500] 23.370.51 [.920.020] 4x r 1.52 [.060] 2x 3.25 [.128] 1.02 [.040] 27.94 [1.100] 34.04 [1.340] d s g flange 13.72 [.540] 45 x (2.03 [.080]) sph 1.57 [.062] 2x 1.63 [.064] r 4.110.38 [.162.015] [.520 ] +.004 ?.006 lid 13.21 +0.10 ?0.15 package outline specifications package h-30260-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products
PTFA241301E ptfa241301f data sheet 10 of 12 rev. 05, 2007-05-11 package outline specifications (cont.) package h-31260-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 260-cases_31260 sph 1.57 [.062] 1.02 [.040] 23.370.51 [.920.020] 2x 12.70 [.500] 45 x 2.031 [.080] d g s -a- 4.110.38 [.162.015] lid 22.350.23 [.880.009] flange 23.11 [.910] 13.72 [.540] 2x 4.830.50 [.190.020] [.520 +.004 ] ?.006 . lid 13.21 +0.10 ?0.15 0.0381 [.0015] 4x r 0.51 [r.020] max
data sheet 11 of 12 rev. 05, 2007-05-11 PTFA241301Ef confidential, limited internal distribution revision history: 2007-05-11 data sheet previous version: 2006 -06-29 , data sheet page subjects (major changes since last revision) 5, 6 add two graphs. 9 update package outline diagram for package h-30260-2. notes:
PTFA241301E ptfa241301f data sheet 12 of 12 rev. 05, 2007-05-11 goldmo s ? is a registered trademark of infineon technologies ag. edition 2007-05-11 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2005. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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